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Ultra-thin high-res image sensor tech developed with US
Source
korea.net
Date
2024.11.21

A joint research team of the Korea Advanced Institute of Science and Technology (KAIST), Inha University and Yale University of the U.S. has developed advanced technology for making high-resolution image sensors that are smaller and more energy efficient. (KAIST)


By Lee Kyeong Mi


Domestic and American researchers have developed next-generation technology to make high-resolution image sensors that are smaller and more energy efficient.


The Korea Advanced Institute of Science and Technology (KAIST) on Nov. 20 said a team led by Kim Sanghyeon, a KAIST professor of electrical and electronic engineering, developed an ultra-thin broadband photodiode in collaboration with Inha University of Incheon and Yale University of the U.S.


The breakthrough shows high potential to enter the global market, as the team has secured the original technology for ultra-high-resolution shortwave infrared image sensors, a niche sector led by Japanese companies.


This technology boasts high quantum efficiency of over 70% even with an absorber layer thinner than a micrometer, enabling reduction of the layer's thickness by some 70%. A thinner layer simplifies the pixel process that allows high resolution and lowers costs.


Including both the visible light and shortwave infrared ranges, the technology is usable in a number of fields like security systems, medical and industrial image sensor applications, autonomous driving, and aviation and satellite observation.


km137426@korea.kr